SK hynix announced the development of the industry’s first 16 Gb DDR5 chip, which will be produced using the 1c process technology – the most advanced, sixth generation of 10nm class manufacturing technology.
Image source: news.skhynix.com
As 10nm technology generations change, the design of DRAM components becomes more complex and memory density increases—now SK hynix has announced that it was the first in the market to overcome technological limitations and mark the transition to next-generation manufacturing standards. New 1c technology promises improved performance and cost competitiveness. Having been implemented for DDR5, it will eventually be adapted for other products, including HBM, LPDDR6 and GDDR7. “We will continue to work to consolidate our leadership in DRAM and our position as the most trusted supplier of memory solutions for AI,” said Kim Jonghwan, head of DRAM development.
Mass production of DDR5 chips using 1c technology will be ready to launch within a year, and SK hynix intends to begin mass deliveries of these products in 2025. The company introduced new materials for ultra-hard ultraviolet (EUV) equipment and achieved a 30% increase in productivity by changing the design of components.
The new generation 1c DDR5 chips will operate at speeds of up to 8 Gbps – 11% faster than the previous components, and their energy efficiency has been increased by more than 9%. Deploying a new type of memory in data centers will help enterprises reduce energy costs by 30%, SK hynix has calculated – this is important because in the era of active use of equipment for artificial intelligence systems, energy consumption is predominantly growing.