Micron introduced 276-layer 3D TLC NAND flash memory chips of the ninth generation (Micron G9 NAND), as well as a series of Micron 2650 PCIe 4.0 solid-state drives based on them. The latter will be released in M.2 2230, 2242 and 2280 formats, offering capacities of 256 and 512 GB, as well as 1 TB.
Image source: Micron
According to Micron, requests from its customers were the main reason for the development of new flash memory chips. The goal was to create a 1Tbit die that would fit into an 11.5mm x 13.5mm BGA package while delivering 3.6Gbps throughput and a 44% higher bit density than with its decisions of previous generations.
Image source: Blocks and Files
Micron says the new drives, based on its 276-layer flash memory chips at 3.6 Gbps per channel, provide best-in-class performance. Micron G9 NAND offers up to 99% higher write throughput and 88% higher on-chip read throughput than currently available competing NAND solutions from SK hynix, Solidigm, Kioxia, Western Digital and Samsung. Additionally, Micron G9 NAND is up to 73% higher in density and 28% smaller in size than competing solutions.
For the Micron 2650 256 GB drive, the company claims sequential read speeds of 5000 MB/s and sequential write speeds of 2500 MB/s, as well as random read and write performance of 370 thousand and 500 IOPS. For the 512 GB model, sequential read and write speeds are specified at 7000 and 4800 MB/s and random read and write performance at 740 thousand and 1 million IOPS. For the 1 TB SSD version, sequential read and write speeds are stated at 7000 and 6000 MB/s, respectively, as well as random read and write performance at 1 million IOPS.
Micron says its new products deliver up to 38% faster performance in the PCMark 10 test, an average of 36% higher throughput and 40% faster data access.
The company notes that the new 276-layer 3D TLC NAND flash memory chips are already available in Micron 2650 drives to OEM partners, and are also being tested for consumer SSDs and its own Crucial brand products.