Scientists have come up with the flash drive of tomorrow – on tellurium nanowire with a recording density of 1.9 TB per square centimeter

An international group of scientists has for the first time experimentally proven the manifestation of the ferroelectric effect in a single-component material – tellurium. Ferroelectrics are usually compounds, which makes their application more difficult and expensive. Scientists went beyond testing the phenomenon and created a prototype field-effect transistor with a nanowire channel, opening the way to future memory and neuromorphic computing.

Image source: Nature Communications

«Ferroelectric materials are substances that can store electrical charge and retain it even when the power is turned off, and their charge can be switched by applying an external electric field – a property necessary for non-volatile memory devices,” explain the authors of the paper, published in Nature Communications. .

The possibility of the ferroelectric effect manifesting itself in single-component materials was known only theoretically. Scientists from Tohoku University, together with colleagues from other countries, have shown that the effect is possible on tellurium (Te) nanowires. Essentially, it is a 2D material in which the ferroelectric effect manifests itself due to “a unique displacement of atoms in the one-dimensional chain structure of tellurium.” The phenomenon was determined using piezoresponse force microscopy and high-resolution scanning transmission electron microscopy.

Based on their discovery, the scientists developed a new device, the self-gating ferroelectric field-effect transistor (SF-FET), which combines ferroelectric and semiconductor properties in one device. The experimental SF-FET demonstrated exceptional data retention, fast switching speed (less than 20 ns) and impressive recording density exceeding 1.9 TB per cm2.

«Our breakthrough opens up new opportunities for next-generation memory devices, where the high mobility of tellurium nanowires and its unique electronic properties can help simplify device architectures,” the authors explain. “Our SF-FET device can also play a critical role in future artificial intelligence systems, enabling neuromorphic computing that mimics the functioning of the human brain.” “In addition, the findings may help reduce power consumption in electronic devices, addressing the need for sustainable technologies.”